Infineon
IPD90N04S3-04
Power Field-Effect Transistor, 90A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
PackageTO-252-3
Quick Jump:
Technical Specifications
Infineon IPD90N04S3-04 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Voltage (Vdss)
40V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
2.3mm
Input Capacitance
5.2nF
Lead Free
Lead Free
Length
6.5mm
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Package Quantity
2500
Packaging
Tape and Reel
Rds On Max
3.6mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
30ns
Turn-On Delay Time
20ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N04S3-04 Datasheet
Download the complete datasheet for Infineon IPD90N04S3-04 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
