Infineon
IPD90N06S4L-06
Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
PackageTO-252-3
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Technical Specifications
Infineon IPD90N06S4L-06 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Voltage (Vdss)
60V
Fall Time
8ns
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Height
2.41mm
Input Capacitance
5.68nF
Length
6.73mm
Max Dual Supply Voltage
60V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Package Quantity
2500
Packaging
Tape and Reel
Rds On Max
6.3mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
50ns
Turn-On Delay Time
10ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N06S4L-06 Datasheet
Download the complete datasheet for Infineon IPD90N06S4L-06 to view detailed technical specifications.
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