Power Field-Effect Transistor, 90A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Sign in to ask questions about the Infineon IPD90P03P4L-04 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD90P03P4L-04 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 5V |
| Halogen Free | Halogen Free |
| Height | 2.3mm |
| Input Capacitance | 11.3nF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 137W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 4.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 17ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD90P03P4L-04 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
