P-Channel Power MOSFET, TO-252 package, featuring 90A continuous drain current and -30V drain-to-source breakdown voltage. Offers low on-state resistance of 3.3mR at 10V/250A, with a maximum of 4.1mR. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 137W. This surface-mount component boasts fast switching characteristics, including a 17ns turn-on delay and 40ns fall time. Designed for automotive applications, it is AEC-Q101 qualified and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
Power137W
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Technical Specifications
Infineon IPD90P03P4L04ATMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
40ns
Gate to Source Voltage (Vgs)
5V
Halogen Free
Halogen Free
Height
2.5mm
Input Capacitance
11.3nF
Lead Free
Contains Lead
Max Dual Supply Voltage
-30V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
137W
Mount
Surface Mount
Number of Elements
1
On-State Resistance
4.5mR
Package Quantity
2500
Packaging
Tape and Reel
Power Dissipation
137W
Radiation Hardening
No
Rds On Max
4.1mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, OptiMOS™
Threshold Voltage
-1.5V
Turn-Off Delay Time
140ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90P03P4L04ATMA1 Datasheet
Download the complete datasheet for Infineon IPD90P03P4L04ATMA1 to view detailed technical specifications.
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