P-Channel Power MOSFET, TO-252 package, featuring 90A continuous drain current and -30V drain-to-source breakdown voltage. Offers low on-state resistance of 3.3mR at 10V/250A, with a maximum of 4.1mR. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 137W. This surface-mount component boasts fast switching characteristics, including a 17ns turn-on delay and 40ns fall time. Designed for automotive applications, it is AEC-Q101 qualified and RoHS compliant.
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Infineon IPD90P03P4L04ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 5V |
| Halogen Free | Halogen Free |
| Height | 2.5mm |
| Input Capacitance | 11.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 137W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 4.5mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 137W |
| Radiation Hardening | No |
| Rds On Max | 4.1mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 17ns |
| RoHS | Compliant |
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