Infineon
IPD90P04P4-05
Power Field-Effect Transistor, 90A I(D), 40V, 0.0047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
PackageTO-252-3
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Technical Specifications
Infineon IPD90P04P4-05 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 7.9nF |
| Length | 6.73mm |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Packaging | Tape and Reel |
| Rds On Max | 4.7mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 3ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD90P04P4-05 Datasheet
Download the complete datasheet for Infineon IPD90P04P4-05 to view detailed technical specifications.
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