IPD90R1K2C3ATMA1

N-channel MOSFET transistor featuring 900V drain-to-source voltage and 5.1A continuous drain current. This single-element transistor offers a low on-state resistance of 1.2 ohms at 10V gate-to-source voltage. With a maximum power dissipation of 83W and a surface mount TO-252-3 package, it is suitable for demanding applications. Operating temperature range spans from -55°C to 150°C, with typical switching times including a 70ns turn-on delay and 40ns fall time.