Power Field-Effect Transistor, 16A I(D), 100V, 0.061ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8-4, 8 PIN
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Infineon IPG16N10S461ATMA1 technical specifications.
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 490pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 29W |
| Mount | Surface Mount |
| On-State Resistance | 61mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 29W |
| Rds On Max | 61mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 5ns |
| Turn-On Delay Time | 3ns |
| RoHS | Compliant |
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