Infineon
IPG20N04S4-12
Power Field-Effect Transistor, 20A I(D), 40V, 0.0122ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
PolarityN-CHANNEL
Power41W
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Technical Specifications
Infineon IPG20N04S4-12 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 12.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 1.13nF |
| Length | 5.15mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 41W |
| Rds On Max | 12.2mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 9ns |
| Width | 6.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N04S4-12 Datasheet
Download the complete datasheet for Infineon IPG20N04S4-12 to view detailed technical specifications.
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