Power Field-Effect Transistor, 20A I(D), 40V, 0.0122ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Infineon IPG20N04S4-12 technical specifications.
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 12.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 1.13nF |
| Length | 5.15mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 41W |
| Rds On Max | 12.2mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 9ns |
| Width | 6.15mm |
| RoHS | Compliant |
No datasheet is available for this part.
