N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 20A continuous drain current. Offers low 7.6mΩ on-state resistance for efficient power switching. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 65W. This silicon, metal-oxide semiconductor FET is packaged in TDSON-8 and supplied on tape and reel.
PolarityN-CHANNEL
Power65W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Infineon IPG20N04S408ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Infineon IPG20N04S408ATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 7.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 13ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.94nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| On-State Resistance | 7.6mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 65W |
| Rds On Max | 7.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N04S408ATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N04S408ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.