The IPG20N04S4L07AATMA1 is a 2 N-Channel MOSFET from Infineon with a maximum continuous drain current of 20A and a maximum drain to source voltage of 40V. It has a maximum power dissipation of 65W and an on-state resistance of 9.2mR. The device is packaged in a surface mount package and is compliant with AEC-Q101 and RoHS. It operates over a temperature range of -55°C to 175°C.
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Infineon IPG20N04S4L07AATMA1 technical specifications.
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 7.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 25ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.98nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| On-State Resistance | 9.2mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 65W |
| Rds On Max | 7.2mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 50ns |
| RoHS | Compliant |
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