N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 20A continuous drain current. Offers low 7.2mΩ on-state resistance and 65W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with a 9ns turn-on delay and 25ns fall time. Packaged in TDSON-8 for surface-mount applications.
PolarityN-CHANNEL
Power65W
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Technical Specifications
Infineon IPG20N04S4L07ATMA1 technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
40V
Fall Time
25ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Input Capacitance
3.98nF
Lead Free
Contains Lead
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
65W
On-State Resistance
7.2mR
Package Quantity
5000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
65W
Rds On Max
7.2mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, OptiMOS™
Turn-Off Delay Time
50ns
Turn-On Delay Time
9ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPG20N04S4L07ATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N04S4L07ATMA1 to view detailed technical specifications.
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