N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 20A continuous drain current. Offers low 7.2mΩ on-state resistance and 65W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with a 9ns turn-on delay and 25ns fall time. Packaged in TDSON-8 for surface-mount applications.
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Infineon IPG20N04S4L07ATMA1 technical specifications.
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 25ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.98nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| On-State Resistance | 7.2mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 65W |
| Rds On Max | 7.2mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
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