N-Channel Power MOSFET, 40V Vds, 20A Continuous Drain Current, 8.2mΩ On-State Resistance. Features 7.2mΩ Drain to Source Resistance, 54W Power Dissipation, and 175°C maximum operating temperature. This surface mount device offers fast switching with a 7ns turn-on delay and 20ns fall time. Designed for automotive applications, it is RoHS compliant and packaged in tape and reel.
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Infineon IPG20N04S4L08ATMA1 technical specifications.
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 7.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 20ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.05nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| On-State Resistance | 8.2mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 54W |
| Rds On Max | 8.2mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 7ns |
| RoHS | Compliant |
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