The IPG20N04S4L11AATMA1 is a 2 N-Channel MOSFET from Infineon with a maximum continuous drain current of 20A and a drain to source voltage of 40V. It has a maximum power dissipation of 41W and an operating temperature range of -55°C to 175°C. The device is RoHS compliant and features a surface mount package type of SMALL OUTLINE, R-PDSO-F6. It is suitable for automotive applications and is compliant with AEC-Q101.
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| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 40V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.99nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 41W |
| Rds On Max | 11.6mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| RoHS | Compliant |
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