Infineon
IPG20N04S4L11AATMA1
Power Field-Effect Transistor, 20A I(D), 40V, 0.0116ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MountingSurface Mount
Power41W
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Technical Specifications
Infineon IPG20N04S4L11AATMA1 technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Voltage (Vdss)
40V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Input Capacitance
1.99nF
Lead Free
Contains Lead
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
41W
Mount
Surface Mount
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
41W
Rds On Max
11.6mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, OptiMOS™
Compliance
RoHS
Compliant
Datasheet
Infineon IPG20N04S4L11AATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N04S4L11AATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.