The IPG20N06S2L-35 is a 2 N-Channel MOSFET with a maximum continuous drain current of 20A and a drain to source voltage of 55V. It features a maximum Rds On of 35mR and a maximum power dissipation of 65W. The device is packaged in a GREEN, PLASTIC, TDSON-8 package and is compliant with RoHS and Reach SVHC regulations. It operates over a temperature range of -55°C to 175°C.
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Technical Specifications
Infineon IPG20N06S2L-35 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 790pF |
| Length | 5.15mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 3ns |
| Width | 5.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N06S2L-35 Datasheet
Download the complete datasheet for Infineon IPG20N06S2L-35 to view detailed technical specifications.
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