N-Channel Power MOSFET featuring 55V drain-source voltage and 20A continuous drain current. Offers low on-state resistance of 35mΩ (typical) and 28mΩ (max), with a maximum power dissipation of 65W. Designed for surface mounting with a TDSON-8 plastic package, this 2-element silicon FET operates across a wide temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 3ns and fall time of 15ns.
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Infineon IPG20N06S2L35ATMA1 technical specifications.
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 790pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| On-State Resistance | 35mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 65W |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 3ns |
| RoHS | Compliant |
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