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Technical Specifications
Infineon IPG20N06S2L50AATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 560pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 51W |
| Mount | Surface Mount |
| On-State Resistance | 60mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 51W |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N06S2L50AATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N06S2L50AATMA1 to view detailed technical specifications.
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