N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 20A continuous drain current. Offers low 50mΩ on-state resistance and 51W power dissipation. Designed with 2 N-channel elements, it operates within a -55°C to 175°C temperature range. This silicon Metal-Oxide-Semiconductor FET is packaged in a GREEN, plastic TDSON-8 with tape and reel packaging.
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Infineon IPG20N06S2L50ATMA1 technical specifications.
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 560pF |
| Lead Free | Contains Lead |
| Length | 5.15mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 51W |
| On-State Resistance | 50mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 51W |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 2ns |
| Width | 5.9mm |
| RoHS | Compliant |
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