Infineon
IPG20N06S4L-14
Power Field-Effect Transistor, 20A I(D), 60V, 0.0137ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
PolarityN-CHANNEL
Power50W
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Technical Specifications
Infineon IPG20N06S4L-14 technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
13.7mR
Drain to Source Voltage (Vdss)
60V
Fall Time
15ns
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Height
1mm
Input Capacitance
2.22nF
Length
5.15mm
Max Dual Supply Voltage
60V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
13.7mR
RoHS Compliant
Yes
Turn-Off Delay Time
40ns
Turn-On Delay Time
8ns
Width
6.15mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPG20N06S4L-14 Datasheet
Download the complete datasheet for Infineon IPG20N06S4L-14 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.