Power Field-Effect Transistor, 20A I(D), 60V, 0.0137ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 13.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 2.22nF |
| Length | 5.15mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 13.7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 8ns |
| Width | 6.15mm |
| RoHS | Compliant |
