N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 20A continuous drain current. Offers low 11.2mΩ on-state resistance for efficient power switching. Designed with a 16V gate-source voltage and a maximum power dissipation of 65W. Operates across a wide temperature range from -55°C to 175°C. Packaged in TDSON-8 for surface-mount applications, supplied on tape and reel.
PolarityN-CHANNEL
Power65W
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Technical Specifications
Infineon IPG20N06S4L11ATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 11.2mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 19ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.02nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| On-State Resistance | 11.2mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 65W |
| Rds On Max | 11.2mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N06S4L11ATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N06S4L11ATMA1 to view detailed technical specifications.
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