N-channel power MOSFET featuring 150V drain-source breakdown voltage and 100A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 7.5mΩ drain-source resistance. Operating across a wide temperature range from -55°C to 175°C, it boasts a maximum power dissipation of 300W. The component is supplied in a TO-262-3 package and is RoHS compliant.
Infineon IPI075N15N3G technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.47nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
No datasheet is available for this part.
