The IPI100N04S3-03 is a 40V, 100A N-channel MOSFET from Infineon, featuring a TO-262-3 package and a maximum operating temperature of 175°C. It has a maximum power dissipation of 214W and is RoHS compliant. The device is suitable for high-power applications and is available in a rail/Tube packaging with 500 units per package.
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Infineon IPI100N04S3-03 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 9.6nF |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Rds On Max | 2.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 30ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPI100N04S3-03 to view detailed technical specifications.
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