Power Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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Infineon IPI126N10N3GXKSA1 technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 58A |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 94W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
