The IPI25N06S3-25 is a 55V N-channel MOSFET with a continuous drain current of 25A and a maximum power dissipation of 48W. It is packaged in a TO-262-3 case and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The MOSFET has a fall time of 27ns and a turn-off delay time of 16ns, making it suitable for high-frequency applications.
PackageTO-262-3
Current Rating25A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPI25N06S3-25 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 25A |
| Current Rating | 25A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.862nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Rds On Max | 25.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 16ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI25N06S3-25 Datasheet
Download the complete datasheet for Infineon IPI25N06S3-25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.