IPI25N06S3-25

Power Field-Effect Transistor, 25A I(D), 55V, 0.0251ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

PackageTO-262-3

Current Rating25A

MountingThrough Hole

PolarityN-CHANNEL

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Infineon IPI25N06S3-25 technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	25A
Current Rating	25A
Drain to Source Breakdown Voltage	55V
Drain to Source Voltage (Vdss)	55V
Fall Time	27ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.862nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	48W
Mount	Through Hole
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	48W
Rds On Max	25.1mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	16ns
DC Rated Voltage	55V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.