The IPI35CN10NG is an N-channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It features a continuous drain current of 27A and a drain to source breakdown voltage of 100V. The device has a drain to source resistance of 35mR and a maximum power dissipation of 58W. The IPI35CN10NG is packaged in a TO-262-3 package and is available in quantities of 500. It is compliant with RoHS regulations and is halogen free.
PackageTO-262-3
PolarityN-CHANNEL
Power58W
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Technical Specifications
Infineon IPI35CN10NG technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.57nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 58W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI35CN10NG Datasheet
Download the complete datasheet for Infineon IPI35CN10NG to view detailed technical specifications.
No datasheet is available for this part.