The IPI35CN10NG is an N-channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It features a continuous drain current of 27A and a drain to source breakdown voltage of 100V. The device has a drain to source resistance of 35mR and a maximum power dissipation of 58W. The IPI35CN10NG is packaged in a TO-262-3 package and is available in quantities of 500. It is compliant with RoHS regulations and is halogen free.
Checking distributor stock and pricing after the page loads.
Infineon IPI35CN10NG technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.57nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 58W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
No datasheet is available for this part.
