N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 165mΩ maximum on-state resistance. This single-element silicon FET offers a continuous drain current of 53A and a maximum power dissipation of 192W. Designed for high-efficiency switching, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-262-3 configuration. Key electrical characteristics include a 3V threshold voltage and fast switching times with a 12ns turn-on delay.
PackageTO-262-3
PolarityN-CHANNEL
Power192W
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Technical Specifications
Infineon IPI60R165CPXKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 165mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 192W |
| On-State Resistance | 165mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Rds On Max | 165mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | IPI60R165 |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI60R165CPXKSA1 Datasheet
Download the complete datasheet for Infineon IPI60R165CPXKSA1 to view detailed technical specifications.
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