N-Channel Power MOSFET featuring 600V drain-source voltage and 16A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 199mΩ at a nominal gate-source voltage of 3V. With a maximum power dissipation of 139W and operating temperatures from -55°C to 150°C, it is suitable for demanding applications. The component is packaged in a TO-262-3 through-hole package, is RoHS compliant, and halogen-free.
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Infineon IPI60R199CPXKSA1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.52nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 139W |
| Rds On Max | 199mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 650V |
| RoHS | Compliant |
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