The IPI65R150CFDXKSA1 is a high-power N-channel MOSFET from Infineon with a maximum drain-to-source voltage of 650V and a continuous drain current of 22.4A. It features a low drain-to-source resistance of 150mR and a maximum power dissipation of 195.3W. The device is packaged in a TO-262-3 package and is designed for through-hole mounting. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
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Infineon IPI65R150CFDXKSA1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 22.4A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 5.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.34nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 195.3W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 52.8ns |
| Turn-On Delay Time | 12.4ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPI65R150CFDXKSA1 to view detailed technical specifications.
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