N-Channel Power MOSFET, 650V Vds, 280mΩ Rds(on), 13.8A ID. This silicon Metal-oxide Semiconductor FET features a TO-262-3 package for through-hole mounting. Key specifications include 950pF input capacitance, 104W max power dissipation, and operating temperatures from -55°C to 150°C. The device is Halogen Free, Lead Free, and RoHS Compliant.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPI65R280E6XKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 950pF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ E6 |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.073511oz |
| Width | 4.52mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI65R280E6XKSA1 Datasheet
Download the complete datasheet for Infineon IPI65R280E6XKSA1 to view detailed technical specifications.
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