The IPI77N06S3-09 is a high-power N-channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a continuous drain current of 77A and a drain to source breakdown voltage of 55V. The device is packaged in a TO-262-3 package and is available in a lead-free version. It is suitable for high-power applications and is compliant with RoHS regulations.
PackageTO-262-3
Current Rating77A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPI77N06S3-09 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 77A |
| Current Rating | 77A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 51ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.335nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Rds On Max | 9.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 29ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI77N06S3-09 Datasheet
Download the complete datasheet for Infineon IPI77N06S3-09 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.