The IPI77N06S3-09 is a high-power N-channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a continuous drain current of 77A and a drain to source breakdown voltage of 55V. The device is packaged in a TO-262-3 package and is available in a lead-free version. It is suitable for high-power applications and is compliant with RoHS regulations.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPI77N06S3-09 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPI77N06S3-09 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 77A |
| Current Rating | 77A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 51ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.335nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Rds On Max | 9.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 29ns |
| DC Rated Voltage | 55V |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPI77N06S3-09 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
