The IPI80N03S4L-04 is a 30V N-CHANNEL MOSFET with a maximum continuous drain current of 80A and a maximum power dissipation of 94W. It is packaged in a TO-262-3 package and is available in a quantity of 500. The device has a gate to source voltage of 16V and a drain to source breakdown voltage of 30V. The IPI80N03S4L-04 is RoHS compliant and has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C.
PackageTO-262-3
Resistance0.0033R
PolarityN-CHANNEL
Power94W
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Technical Specifications
Infineon IPI80N03S4L-04 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.1nF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 94W |
| Rds On Max | 3.7mR |
| Resistance | 0.0033R |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 37ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI80N03S4L-04 Datasheet
Download the complete datasheet for Infineon IPI80N03S4L-04 to view detailed technical specifications.
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