IPI80N06S2L11AKSA1

N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.011 ohm Rds On (Max) and 158W power dissipation. Designed for demanding applications, it operates across a wide temperature range from -55°C to 175°C. The component is housed in a TO-262-3 package, with typical switching times including 11ns turn-on delay and 13ns fall time.