N-channel silicon power MOSFET featuring 650V drain-source voltage and 28A continuous drain current. This surface-mount device offers a low on-state resistance of 70mΩ (62mΩ typical) and a maximum power dissipation of 169W. Designed for efficient switching, it exhibits a fast fall time of 11ns and turn-on delay of 14ns. Operating across a wide temperature range of -40°C to 150°C, this RoHS compliant component is supplied in VSON packaging.
PackageVSON
MountingSurface Mount
Power169W
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Technical Specifications
Infineon IPL65R070C7AUMA1 technical specifications.
General
| Package/Case | VSON |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.02nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 169W |
| Mount | Surface Mount |
| On-State Resistance | 70mR |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 169W |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPL65R070C7AUMA1 Datasheet
Download the complete datasheet for Infineon IPL65R070C7AUMA1 to view detailed technical specifications.
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