N-channel power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers 130mΩ on-state resistance for efficient power switching. Designed for surface mounting in a VSON package, this silicon metal-oxide semiconductor FET operates from -40°C to 150°C with a maximum power dissipation of 102W. Key switching parameters include a 11ns turn-on delay and 12ns fall time.
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Infineon IPL65R130C7AUMA1 technical specifications.
| Package/Case | VSON |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.67nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 102W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 130mR |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 102W |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 87ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
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