Power Field-Effect Transistor, 12A I(D), 650V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
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Infineon IPL65R195C7AUMA1 technical specifications.
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 650V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.15nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Rds On Max | 195mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| RoHS | Compliant |
No datasheet is available for this part.
