N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 90A continuous drain current. This single-element transistor utilizes OptiMOS process technology and offers a low drain-source on-resistance of 2.3 mOhm at 10V. Packaged in a TO-220 through-hole configuration with 3 pins and a tab, it supports a maximum power dissipation of 167W and operates across a temperature range of -55°C to 175°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP023N04NGHKSA1 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.45(Max) |
| Seated Plane Height (mm) | 20.75(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 90A |
| Maximum Drain Source Resistance | 2.3@10VmOhm |
| Typical Gate Charge @ Vgs | 90@10VnC |
| Typical Gate Charge @ 10V | 90nC |
| Typical Input Capacitance @ Vds | 7300@20VpF |
| Maximum Power Dissipation | 167000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Infineon IPP023N04NGHKSA1 Datasheet
Download the complete datasheet for Infineon IPP023N04NGHKSA1 to view detailed technical specifications.
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