This N-channel OptiMOS™ 5 power MOSFET is rated for 100 V drain-source voltage and 120 A continuous drain current in a TO-220 package. It has a maximum RDS(on) of 3 mΩ at 10 V, a typical total gate charge of 112 nC, and input and output capacitances of 7920 pF and 1210 pF. The device is optimized for synchronous rectification and high switching frequency operation. It operates from -55 °C to 175 °C and is specified for 250 W total power dissipation with thermal resistances of 62 K/W junction-to-ambient and 0.6 K/W junction-to-case. Typical applications include telecom and server power supplies, solar systems, low-voltage drives, laptop adapters, UPS, and medium-voltage IBC designs.
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| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
