N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 120A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3.2mΩ drain-source resistance. Operating across a wide temperature range from -55°C to 175°C, it boasts a maximum power dissipation of 188W. Packaged in a TO-220AB, this component is halogen-free, lead-free, and RoHS compliant.
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Infineon IPP032N06N3GXKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.9mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 13nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 188W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 35ns |
| Width | 4.57mm |
| RoHS | Compliant |
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