This N-channel power MOSFET is rated for 100 V drain-source voltage and up to 137 A drain current. It uses OptiMOS™ 3 technology and has a maximum RDS(on) of 4.5 mΩ in a TO-220 package. The device is intended for high-efficiency, high power-density switched-mode power supplies. Infineon lists excellent switching performance, low gate charge, and low gate-drain charge for this part. The product is also identified as RoHS compliant, halogen free, and MSL1 rated on the manufacturer page.
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Infineon IPP045N10N3G technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
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