Power Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Infineon IPP04CN10NG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 3.9mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 13.8nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 4.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 34ns |
| RoHS | Compliant |
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