IPP04CN10NG

Name: IPP04CN10NG Infineon
Brand: Infineon
SKU: IPP04CN10NG

Power Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

PackageTO-220-3

PolarityN-CHANNEL

Power300W

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Infineon IPP04CN10NG technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	100A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	3.9mR
Fall Time	25ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	13.8nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Rds On Max	4.2mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	OptiMOS™
Threshold Voltage	3V
Turn-Off Delay Time	76ns
Turn-On Delay Time	34ns