The IPP04CN10NGXKSA1 is a TO-220 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a maximum continuous drain current of 100A and a maximum drain to source breakdown voltage of 100V. The device is lead free and halogen free, and is RoHS compliant. It has a power dissipation of 300W and a drain to source resistance of 3.9mΩ. The MOSFET has a fall time of 25ns and a turn-off delay time of 76ns, and a turn-on delay time of 34ns.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP04CN10NGXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 34ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP04CN10NGXKSA1 Datasheet
Download the complete datasheet for Infineon IPP04CN10NGXKSA1 to view detailed technical specifications.
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