IPP050N06NG

Name: IPP050N06NG Infineon
Brand: Infineon
SKU: IPP050N06NG

Power Field-Effect Transistor, 100A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

PackageTO-220-3

Current Rating100A

MountingThrough Hole

PolarityN-CHANNEL

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Infineon IPP050N06NG technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	100A
Current Rating	100A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	5mR
Drain to Source Voltage (Vdss)	60V
Fall Time	30ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	6.1nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Through Hole
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Rds On Max	5mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	59ns
DC Rated Voltage	60V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.