N-channel power MOSFET featuring 150V drain-source voltage and 120A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.0051 ohms. Designed with a single element and three terminals, it is housed in a TO-220AB package.
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| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IPP051N15N5AKSA1 to view detailed technical specifications.
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