N-channel silicon power MOSFET featuring 60V drain-source breakdown voltage and 80A continuous drain current. This through-hole component offers a low on-state resistance of 5.7mR at a nominal gate-source voltage of 3V. Designed for high-power applications, it boasts a maximum power dissipation of 115W and operates within a temperature range of -55°C to 175°C. The TO-220AB package ensures robust thermal performance.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power115W
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Technical Specifications
Infineon IPP057N06N3GXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 6.6nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| On-State Resistance | 5.7mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Rds On Max | 5.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 24ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP057N06N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPP057N06N3GXKSA1 to view detailed technical specifications.
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