The IPP057N08N3GHKSA1 is an N-CHANNEL MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current of 80A and a drain to source voltage of 80V. The device features a drain to source resistance of 5.4mR and a gate to source voltage of 20V. The MOSFET is packaged in a TO-220-3 package and is mounted through a hole. It is RoHS compliant and part of the OptiMOS series.
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Infineon IPP057N08N3GHKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 5.4mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.75nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPP057N08N3GHKSA1 to view detailed technical specifications.
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