N-channel Power MOSFET featuring 75V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 6.2mΩ on-state resistance and 136W power dissipation. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-220AB configuration. The component is RoHS compliant and halogen-free.
PackageTO-220-3
PolarityN-CHANNEL
Power136W
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Technical Specifications
Infineon IPP062NE7N3GXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 6.2mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.84nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Number of Elements | 1 |
| On-State Resistance | 6.2mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| Radiation Hardening | No |
| Rds On Max | 6.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP062NE7N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPP062NE7N3GXKSA1 to view detailed technical specifications.
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