N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 7mΩ drain-source resistance (Rds On Max) and 214W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with turn-on delay of 18ns and fall time of 31ns. This RoHS compliant component is lead-free.
PackageTO-220-3
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP070N06LG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP070N06LG Datasheet
Download the complete datasheet for Infineon IPP070N06LG to view detailed technical specifications.
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