N-Channel Power MOSFET featuring 150V drain-source voltage and 100A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 7.5mR and a maximum power dissipation of 300W. Operating across a wide temperature range from -55°C to 175°C, it includes fast switching characteristics with a turn-on delay of 25ns and fall time of 14ns. The component is housed in a TO-220-3 package, is RoHS compliant, and lead-free.
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Infineon IPP075N15N3GXKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Current | 100A |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 5.47nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| On-State Resistance | 7.5mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 25ns |
| Voltage | 150V |
| Width | 4.57mm |
| RoHS | Compliant |
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