The IPP093N06N3GXKSA1 is a 50A TO-220-3 N-Channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 71W and a gate to source voltage of 20V. The device is packaged in a TO-220-3 package and is available in quantities of 500. It is RoHS compliant and halogen free.
Infineon IPP093N06N3GXKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 50A |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 2.9nF |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 9.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Width | 15.95mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPP093N06N3GXKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
