The IPP100N08N3GHKSA1 is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a continuous drain current of 70A and a drain to source voltage of 80V. The device has a drain to source resistance of 9.7mR and a maximum power dissipation of 100W. It is packaged in a TO-220-3 flange mount package and is suitable for high-power applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP100N08N3GHKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Resistance | 9.7mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.41nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon IPP100N08N3GHKSA1 Datasheet
Download the complete datasheet for Infineon IPP100N08N3GHKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.