N-channel power MOSFET featuring 80V drain-source breakdown voltage and 70A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 10mΩ on-state resistance and 100W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 175°C and is RoHS compliant and halogen-free. Key electrical characteristics include a 2.41nF input capacitance and fast switching times with a 5ns fall time.
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Infineon IPP100N08N3GXKSA1 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 2.41nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 9.7mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 14ns |
| Width | 4.57mm |
| RoHS | Compliant |
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